Effect of proton irradiation on the breakdown voltage of a high-voltage p–n junction
- Авторлар: Paderov V.1, Silkin D.1, Goryachkin Y.1, Khapugin A.2, Grishanin A.2
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Мекемелер:
- Ogarev Mordovia State University
- OAO Electrovypryamitel’
- Шығарылым: Том 62, № 6 (2017)
- Беттер: 616-620
- Бөлім: Physical Processes in Electron Devices
- URL: https://journals.rcsi.science/1064-2269/article/view/198449
- DOI: https://doi.org/10.1134/S1064226917060158
- ID: 198449
Дәйексөз келтіру
Аннотация
The effect of hydrogen-related shallow thermal donors and acceptor-like defects arising under proton irradiation of silicon on the breakdown voltage of a high-voltage p–n junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated p–n junction taking into account the increase in critical field intensity during the ingress of hydrogen-related shallow thermal donors into the region of collisional ionization of the p–n junction are obtained. A technique for determination of the layer position and the minimum dose of hydrogen-related shallow thermal donors making it possible to decrease the breakdown voltage by a specified amount is proposed.
Авторлар туралы
V. Paderov
Ogarev Mordovia State University
Email: d-s.silkin@mail.ru
Ресей, Saransk, Mordovia, 430005
D. Silkin
Ogarev Mordovia State University
Хат алмасуға жауапты Автор.
Email: d-s.silkin@mail.ru
Ресей, Saransk, Mordovia, 430005
Yu. Goryachkin
Ogarev Mordovia State University
Email: d-s.silkin@mail.ru
Ресей, Saransk, Mordovia, 430005
A. Khapugin
OAO Electrovypryamitel’
Email: d-s.silkin@mail.ru
Ресей, Saransk, Mordovia, 430030
A. Grishanin
OAO Electrovypryamitel’
Email: d-s.silkin@mail.ru
Ресей, Saransk, Mordovia, 430030