Characteristics of heteroepitaxial structures AlxGa1–xN for p–i–n diode focal plane arrays
- Autores: Smirnov D.1, Boltar K.1,2, Sednev M.1, Sharonov Y.1
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Afiliações:
- OAO NPO Orion
- Moscow Institute of Physics and Technology (State University)
- Edição: Volume 61, Nº 3 (2016)
- Páginas: 358-362
- Seção: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196880
- DOI: https://doi.org/10.1134/S1064226916030189
- ID: 196880
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Resumo
Mesaelements of the focal plane array (FPA) of p–i–n diodes based on AlxGa1–xN for p–i–n heteroepitaxial structures (HESs) grown by the molecular-beam epitaxy and hydride epitaxy methods with the use of metalorganic compounds are formed. Elements of 320 × 256 FPAs with a pitch of 30 μm are separated by means of ion-beam etching through a photoresist mask in the argon ion stream produced by the Kaufmann ion source in a vacuum plant. To determine the required etching depth, contact profilometry and ultraviolet spectrophotometry methods allowing one to determine positions of the n-layer and sufficient etching depth of the sample are used. The thickness accuracy of the HES functional layers stated in manufacturer’s certificates does not exceed 28%. Rates of ion-beam etching of AlxGa1–xN for p–i–n layers with different compositions are determined.
Sobre autores
D. Smirnov
OAO NPO Orion
Autor responsável pela correspondência
Email: orion@orion-ir.ru
Rússia, ul. Kosinskaya 9, Moscow, 111538
K. Boltar
OAO NPO Orion; Moscow Institute of Physics and Technology (State University)
Email: orion@orion-ir.ru
Rússia, ul. Kosinskaya 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700
M. Sednev
OAO NPO Orion
Email: orion@orion-ir.ru
Rússia, ul. Kosinskaya 9, Moscow, 111538
Yu. Sharonov
OAO NPO Orion
Email: orion@orion-ir.ru
Rússia, ul. Kosinskaya 9, Moscow, 111538