Мақаланы E-mail арқылы жіберу Silicon-on-Insulator Low-Noise Amplifier Fabricated Using the 0.18-μm Technology
- Авторлар: Koptsev D.1, Kovaleva O.1, Shelepin N.1
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Мекемелер:
- Research Institute for Molecular Electronics, Zelenograd
- Шығарылым: Том 62, № 12 (2017)
- Беттер: 1427-1430
- Бөлім: Novel Radio Systems and Elements
- URL: https://journals.rcsi.science/1064-2269/article/view/199073
- DOI: https://doi.org/10.1134/S1064226917110092
- ID: 199073
Дәйексөз келтіру
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Аннотация
A silicon-on-insulator CMOS low-noise amplifier has been designed, fabricated using the 0.18-μm topology, and tested. The following key characteristics of this amplifier have been determined: parameter S21 is no lower than 11 dB in the frequency range from 500 MHz to 1.5 GHz, and the noise factor is no higher than 4 dB at 2 GHz.
Авторлар туралы
D. Koptsev
Research Institute for Molecular Electronics, Zelenograd
Хат алмасуға жауапты Автор.
Email: dkoptsev@mikron.ru
Ресей, Moscow, 124460
O. Kovaleva
Research Institute for Molecular Electronics, Zelenograd
Email: dkoptsev@mikron.ru
Ресей, Moscow, 124460
N. Shelepin
Research Institute for Molecular Electronics, Zelenograd
Email: dkoptsev@mikron.ru
Ресей, Moscow, 124460
