电邮这篇文章 Silicon-on-Insulator Low-Noise Amplifier Fabricated Using the 0.18-μm Technology
- 作者: Koptsev D.1, Kovaleva O.1, Shelepin N.1
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隶属关系:
- Research Institute for Molecular Electronics, Zelenograd
- 期: 卷 62, 编号 12 (2017)
- 页面: 1427-1430
- 栏目: Novel Radio Systems and Elements
- URL: https://journals.rcsi.science/1064-2269/article/view/199073
- DOI: https://doi.org/10.1134/S1064226917110092
- ID: 199073
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详细
A silicon-on-insulator CMOS low-noise amplifier has been designed, fabricated using the 0.18-μm topology, and tested. The following key characteristics of this amplifier have been determined: parameter S21 is no lower than 11 dB in the frequency range from 500 MHz to 1.5 GHz, and the noise factor is no higher than 4 dB at 2 GHz.
作者简介
D. Koptsev
Research Institute for Molecular Electronics, Zelenograd
编辑信件的主要联系方式.
Email: dkoptsev@mikron.ru
俄罗斯联邦, Moscow, 124460
O. Kovaleva
Research Institute for Molecular Electronics, Zelenograd
Email: dkoptsev@mikron.ru
俄罗斯联邦, Moscow, 124460
N. Shelepin
Research Institute for Molecular Electronics, Zelenograd
Email: dkoptsev@mikron.ru
俄罗斯联邦, Moscow, 124460
