Wave properties of shallow-layer semiconductor–insulator medium in the presence of magnetic field


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

Expressions for effective permittivity of a periodic semiconductor–insulator structure with both n- and p-type semiconductor layers are derived in the approximation of shallow-layer medium. Dispersion relations are obtained for the TM wave that is controlled by external magnetic field with allowance for different propagation directions of the wave relative to the periodicity axis of the structure. Specific features of the transmission spectrum of wave are revealed for a layer of shallow-layer medium with finite thickness at several ratios of layer thicknesses in the period of structure.

Sobre autores

I. Fedorova

Ulyanovsk State University

Autor responsável pela correspondência
Email: sementsovdi@mail.ru
Rússia, ul. L. Tolstogo 42, Ulyanovsk, 432970

D. Sementsov

Ulyanovsk State University

Email: sementsovdi@mail.ru
Rússia, ul. L. Tolstogo 42, Ulyanovsk, 432970

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Inc., 2017