Wave properties of shallow-layer semiconductor–insulator medium in the presence of magnetic field
- Авторлар: Fedorova I.1, Sementsov D.1
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Мекемелер:
- Ulyanovsk State University
- Шығарылым: Том 62, № 8 (2017)
- Беттер: 874-881
- Бөлім: Radio Phenomena in Solids and Plasma
- URL: https://journals.rcsi.science/1064-2269/article/view/198665
- DOI: https://doi.org/10.1134/S106422691708006X
- ID: 198665
Дәйексөз келтіру
Аннотация
Expressions for effective permittivity of a periodic semiconductor–insulator structure with both n- and p-type semiconductor layers are derived in the approximation of shallow-layer medium. Dispersion relations are obtained for the TM wave that is controlled by external magnetic field with allowance for different propagation directions of the wave relative to the periodicity axis of the structure. Specific features of the transmission spectrum of wave are revealed for a layer of shallow-layer medium with finite thickness at several ratios of layer thicknesses in the period of structure.
Авторлар туралы
I. Fedorova
Ulyanovsk State University
Хат алмасуға жауапты Автор.
Email: sementsovdi@mail.ru
Ресей, ul. L. Tolstogo 42, Ulyanovsk, 432970
D. Sementsov
Ulyanovsk State University
Email: sementsovdi@mail.ru
Ресей, ul. L. Tolstogo 42, Ulyanovsk, 432970
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