Wave properties of shallow-layer semiconductor–insulator medium in the presence of magnetic field
- Authors: Fedorova I.V.1, Sementsov D.I.1
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Affiliations:
- Ulyanovsk State University
- Issue: Vol 62, No 8 (2017)
- Pages: 874-881
- Section: Radio Phenomena in Solids and Plasma
- URL: https://journals.rcsi.science/1064-2269/article/view/198665
- DOI: https://doi.org/10.1134/S106422691708006X
- ID: 198665
Cite item
Abstract
Expressions for effective permittivity of a periodic semiconductor–insulator structure with both n- and p-type semiconductor layers are derived in the approximation of shallow-layer medium. Dispersion relations are obtained for the TM wave that is controlled by external magnetic field with allowance for different propagation directions of the wave relative to the periodicity axis of the structure. Specific features of the transmission spectrum of wave are revealed for a layer of shallow-layer medium with finite thickness at several ratios of layer thicknesses in the period of structure.
About the authors
I. V. Fedorova
Ulyanovsk State University
Author for correspondence.
Email: sementsovdi@mail.ru
Russian Federation, ul. L. Tolstogo 42, Ulyanovsk, 432970
D. I. Sementsov
Ulyanovsk State University
Email: sementsovdi@mail.ru
Russian Federation, ul. L. Tolstogo 42, Ulyanovsk, 432970