Analysis of Multilayer Heteroepitaxial Structures Based on CdHgTe Using Infrared Transmission Spectra
- Autores: Nikonov A.V.1,2, Yakovleva N.I.1
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Afiliações:
- Orion R&P Association
- Moscow Institute of Physics and Technology (State University)
- Edição: Volume 64, Nº 3 (2019)
- Páginas: 314-318
- Seção: Article
- URL: https://journals.rcsi.science/1064-2269/article/view/200555
- DOI: https://doi.org/10.1134/S1064226919030148
- ID: 200555
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Resumo
In this paper, we studied the transmission spectra of multilayer heteroepitaxial structures based on ternary cadmium-mercury-tellurium (CMT) solid solutions. A model for calculating the characteristics of epitaxial layers that compose a complex multilayer heteroepitaxial structure via experimental transmission spectrum was implemented. A packet gradient descent method is realized to calculate the parameters of the layers. We calculated the parameters of heteroepitaxial structures grown via liquid phase and molecular beam epitaxy: a thickness of operating photosensitive layers with an error of no more than 0.1 μm and a CMT composition with an error of no more than 1% were determined. The developed models show the efficacy in express control of the optical characteristics of semiconductor structures.
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Sobre autores
A. Nikonov
Orion R&P Association; Moscow Institute of Physics and Technology (State University)
Email: orion@orion-ir.ru
Rússia, Moscow, 111538; Dolgoprudnyi, 141700
N. Yakovleva
Orion R&P Association
Autor responsável pela correspondência
Email: orion@orion-ir.ru
Rússia, Moscow, 111538
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