Modeling of a High-Frequency Microelectromechanical X-Band Switch for Space Applications


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Abstract

The results of modeling of microwave and mechanical characteristics of an X-band switch based on the technology of high-frequency microelectromechanical structures are presented. A method for design of a device operating directly in the external environment and a device whose moving components are placed in a dielectric case. Characteristics of the optimized switches are determined. Estimated mechanical calculations confirming high stability of the developed high-frequency microelectromechanical structure switches in the temperature range specific of devices used in the space industry are also performed.

About the authors

E. A. Savin

BTlabs LLC

Author for correspondence.
Email: e.savin@btlabs.ru
Russian Federation, Moscow, 212108

G. K. Alagashev

BTlabs LLC

Email: e.savin@btlabs.ru
Russian Federation, Moscow, 212108

P. I. Didyk

Russian Space Systems JVC

Email: e.savin@btlabs.ru
Russian Federation, Moscow, 111250

A. A. Zhukov

Russian Space Systems JVC

Email: e.savin@btlabs.ru
Russian Federation, Moscow, 111250

K. A. Chadin

BTlabs LLC

Email: e.savin@btlabs.ru
Russian Federation, Moscow, 212108

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