Modeling of a High-Frequency Microelectromechanical X-Band Switch for Space Applications
- Authors: Savin E.A.1, Alagashev G.K.1, Didyk P.I.2, Zhukov A.A.2, Chadin K.A.1
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Affiliations:
- BTlabs LLC
- Russian Space Systems JVC
- Issue: Vol 64, No 1 (2019)
- Pages: 52-58
- Section: Microwave Electronics
- URL: https://journals.rcsi.science/1064-2269/article/view/200269
- DOI: https://doi.org/10.1134/S1064226919010108
- ID: 200269
Cite item
Abstract
The results of modeling of microwave and mechanical characteristics of an X-band switch based on the technology of high-frequency microelectromechanical structures are presented. A method for design of a device operating directly in the external environment and a device whose moving components are placed in a dielectric case. Characteristics of the optimized switches are determined. Estimated mechanical calculations confirming high stability of the developed high-frequency microelectromechanical structure switches in the temperature range specific of devices used in the space industry are also performed.
About the authors
E. A. Savin
BTlabs LLC
Author for correspondence.
Email: e.savin@btlabs.ru
Russian Federation, Moscow, 212108
G. K. Alagashev
BTlabs LLC
Email: e.savin@btlabs.ru
Russian Federation, Moscow, 212108
P. I. Didyk
Russian Space Systems JVC
Email: e.savin@btlabs.ru
Russian Federation, Moscow, 111250
A. A. Zhukov
Russian Space Systems JVC
Email: e.savin@btlabs.ru
Russian Federation, Moscow, 111250
K. A. Chadin
BTlabs LLC
Email: e.savin@btlabs.ru
Russian Federation, Moscow, 212108
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