Modeling of a High-Frequency Microelectromechanical X-Band Switch for Space Applications


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The results of modeling of microwave and mechanical characteristics of an X-band switch based on the technology of high-frequency microelectromechanical structures are presented. A method for design of a device operating directly in the external environment and a device whose moving components are placed in a dielectric case. Characteristics of the optimized switches are determined. Estimated mechanical calculations confirming high stability of the developed high-frequency microelectromechanical structure switches in the temperature range specific of devices used in the space industry are also performed.

作者简介

E. Savin

BTlabs LLC

编辑信件的主要联系方式.
Email: e.savin@btlabs.ru
俄罗斯联邦, Moscow, 212108

G. Alagashev

BTlabs LLC

Email: e.savin@btlabs.ru
俄罗斯联邦, Moscow, 212108

P. Didyk

Russian Space Systems JVC

Email: e.savin@btlabs.ru
俄罗斯联邦, Moscow, 111250

A. Zhukov

Russian Space Systems JVC

Email: e.savin@btlabs.ru
俄罗斯联邦, Moscow, 111250

K. Chadin

BTlabs LLC

Email: e.savin@btlabs.ru
俄罗斯联邦, Moscow, 212108

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