Modeling of a High-Frequency Microelectromechanical X-Band Switch for Space Applications
- 作者: Savin E.A.1, Alagashev G.K.1, Didyk P.I.2, Zhukov A.A.2, Chadin K.A.1
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隶属关系:
- BTlabs LLC
- Russian Space Systems JVC
- 期: 卷 64, 编号 1 (2019)
- 页面: 52-58
- 栏目: Microwave Electronics
- URL: https://journals.rcsi.science/1064-2269/article/view/200269
- DOI: https://doi.org/10.1134/S1064226919010108
- ID: 200269
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详细
The results of modeling of microwave and mechanical characteristics of an X-band switch based on the technology of high-frequency microelectromechanical structures are presented. A method for design of a device operating directly in the external environment and a device whose moving components are placed in a dielectric case. Characteristics of the optimized switches are determined. Estimated mechanical calculations confirming high stability of the developed high-frequency microelectromechanical structure switches in the temperature range specific of devices used in the space industry are also performed.
作者简介
E. Savin
BTlabs LLC
编辑信件的主要联系方式.
Email: e.savin@btlabs.ru
俄罗斯联邦, Moscow, 212108
G. Alagashev
BTlabs LLC
Email: e.savin@btlabs.ru
俄罗斯联邦, Moscow, 212108
P. Didyk
Russian Space Systems JVC
Email: e.savin@btlabs.ru
俄罗斯联邦, Moscow, 111250
A. Zhukov
Russian Space Systems JVC
Email: e.savin@btlabs.ru
俄罗斯联邦, Moscow, 111250
K. Chadin
BTlabs LLC
Email: e.savin@btlabs.ru
俄罗斯联邦, Moscow, 212108
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