Author Details
Mikhailov, N. N.
| Issue | Section | Title | File |
| Vol 63, No 3 (2018) | Articles from the Russian Journal Prikladnaya Fizika | Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator | |
| Vol 64, No 3 (2019) | Article | Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy |