电邮这篇文章 Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates
- 作者: Gagis G.1,2, Vlasov A.1, Levin R.1, Marichev A.1, Scheglov M.1, Popova T.1, Ber B.1, Kazantsev D.1, Chistyakov D.3, Kuchinskii V.1,2, Vasil’ev V.1
-
隶属关系:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- St. Petersburg State Electrotechnical University LETI
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- 期: 卷 45, 编号 10 (2019)
- 页面: 1031-1034
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208457
- DOI: https://doi.org/10.1134/S1063785019100213
- ID: 208457
如何引用文章
开放存取
##reader.subscriptionAccessGranted##
订阅存取
详细
Luminescence properties of epilayers of Ga1 –xInxAsyP1 –y (GaInAsP) solid solutions with graded content of Group V elements (Δy up to 0.08 over a total thickness of about 1 μm) were studied at 77 and 300 K. The photoluminescence (PL) spectra of GaInAsP epilayers with large Δy values were broadened. The GaInAsP epilayers of low crystalline perfection exhibited either no PL emission or showed PL spectra characteristic of transitions involving impurity energy levels.
作者简介
G. Gagis
Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
编辑信件的主要联系方式.
Email: galina.gagis@gmail.com
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg
A. Vlasov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
俄罗斯联邦, St. Petersburg, 194021
R. Levin
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
俄罗斯联邦, St. Petersburg, 194021
A. Marichev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
俄罗斯联邦, St. Petersburg, 194021
M. Scheglov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
俄罗斯联邦, St. Petersburg, 194021
T. Popova
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
俄罗斯联邦, St. Petersburg, 194021
B. Ber
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
俄罗斯联邦, St. Petersburg, 194021
D. Kazantsev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
俄罗斯联邦, St. Petersburg, 194021
D. Chistyakov
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: galina.gagis@gmail.com
俄罗斯联邦, St. Petersburg, 197101
V. Kuchinskii
Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
Email: galina.gagis@gmail.com
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg
V. Vasil’ev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
俄罗斯联邦, St. Petersburg, 194021
