Enviar artigo por via de e-mail Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates
- Autores: Gagis G.1,2, Vlasov A.1, Levin R.1, Marichev A.1, Scheglov M.1, Popova T.1, Ber B.1, Kazantsev D.1, Chistyakov D.3, Kuchinskii V.1,2, Vasil’ev V.1
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Afiliações:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- St. Petersburg State Electrotechnical University LETI
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Edição: Volume 45, Nº 10 (2019)
- Páginas: 1031-1034
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208457
- DOI: https://doi.org/10.1134/S1063785019100213
- ID: 208457
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Resumo
Luminescence properties of epilayers of Ga1 –xInxAsyP1 –y (GaInAsP) solid solutions with graded content of Group V elements (Δy up to 0.08 over a total thickness of about 1 μm) were studied at 77 and 300 K. The photoluminescence (PL) spectra of GaInAsP epilayers with large Δy values were broadened. The GaInAsP epilayers of low crystalline perfection exhibited either no PL emission or showed PL spectra characteristic of transitions involving impurity energy levels.
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Sobre autores
G. Gagis
Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
Autor responsável pela correspondência
Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg
A. Vlasov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021
R. Levin
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021
A. Marichev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021
M. Scheglov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021
T. Popova
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021
B. Ber
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021
D. Kazantsev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021
D. Chistyakov
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 197101
V. Kuchinskii
Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg
V. Vasil’ev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021
