Отправить статью по E-mail Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates
- Авторы: Gagis G.1,2, Vlasov A.1, Levin R.1, Marichev A.1, Scheglov M.1, Popova T.1, Ber B.1, Kazantsev D.1, Chistyakov D.3, Kuchinskii V.1,2, Vasil’ev V.1
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Учреждения:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- St. Petersburg State Electrotechnical University LETI
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Выпуск: Том 45, № 10 (2019)
- Страницы: 1031-1034
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208457
- DOI: https://doi.org/10.1134/S1063785019100213
- ID: 208457
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Аннотация
Luminescence properties of epilayers of Ga1 –xInxAsyP1 –y (GaInAsP) solid solutions with graded content of Group V elements (Δy up to 0.08 over a total thickness of about 1 μm) were studied at 77 and 300 K. The photoluminescence (PL) spectra of GaInAsP epilayers with large Δy values were broadened. The GaInAsP epilayers of low crystalline perfection exhibited either no PL emission or showed PL spectra characteristic of transitions involving impurity energy levels.
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Об авторах
G. Gagis
Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
Автор, ответственный за переписку.
Email: galina.gagis@gmail.com
Россия, St. Petersburg, 194021; St. Petersburg
A. Vlasov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Россия, St. Petersburg, 194021
R. Levin
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Россия, St. Petersburg, 194021
A. Marichev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Россия, St. Petersburg, 194021
M. Scheglov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Россия, St. Petersburg, 194021
T. Popova
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Россия, St. Petersburg, 194021
B. Ber
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Россия, St. Petersburg, 194021
D. Kazantsev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Россия, St. Petersburg, 194021
D. Chistyakov
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: galina.gagis@gmail.com
Россия, St. Petersburg, 197101
V. Kuchinskii
Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
Email: galina.gagis@gmail.com
Россия, St. Petersburg, 194021; St. Petersburg
V. Vasil’ev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Россия, St. Petersburg, 194021
