Мақаланы E-mail арқылы жіберу Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates
- Авторлар: Gagis G.1,2, Vlasov A.1, Levin R.1, Marichev A.1, Scheglov M.1, Popova T.1, Ber B.1, Kazantsev D.1, Chistyakov D.3, Kuchinskii V.1,2, Vasil’ev V.1
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Мекемелер:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- St. Petersburg State Electrotechnical University LETI
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Шығарылым: Том 45, № 10 (2019)
- Беттер: 1031-1034
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208457
- DOI: https://doi.org/10.1134/S1063785019100213
- ID: 208457
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
Luminescence properties of epilayers of Ga1 –xInxAsyP1 –y (GaInAsP) solid solutions with graded content of Group V elements (Δy up to 0.08 over a total thickness of about 1 μm) were studied at 77 and 300 K. The photoluminescence (PL) spectra of GaInAsP epilayers with large Δy values were broadened. The GaInAsP epilayers of low crystalline perfection exhibited either no PL emission or showed PL spectra characteristic of transitions involving impurity energy levels.
Негізгі сөздер
Авторлар туралы
G. Gagis
Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
Хат алмасуға жауапты Автор.
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg
A. Vlasov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
R. Levin
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
A. Marichev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
M. Scheglov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
T. Popova
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
B. Ber
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
D. Kazantsev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
D. Chistyakov
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 197101
V. Kuchinskii
Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg
V. Vasil’ev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
