Email this article Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates
- Authors: Gagis G.S.1,2, Vlasov A.S.1, Levin R.V.1, Marichev A.E.1, Scheglov M.P.1, Popova T.B.1, Ber B.Y.1, Kazantsev D.Y.1, Chistyakov D.V.3, Kuchinskii V.I.1,2, Vasil’ev V.I.1
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Affiliations:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- St. Petersburg State Electrotechnical University LETI
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Issue: Vol 45, No 10 (2019)
- Pages: 1031-1034
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208457
- DOI: https://doi.org/10.1134/S1063785019100213
- ID: 208457
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Abstract
Luminescence properties of epilayers of Ga1 –xInxAsyP1 –y (GaInAsP) solid solutions with graded content of Group V elements (Δy up to 0.08 over a total thickness of about 1 μm) were studied at 77 and 300 K. The photoluminescence (PL) spectra of GaInAsP epilayers with large Δy values were broadened. The GaInAsP epilayers of low crystalline perfection exhibited either no PL emission or showed PL spectra characteristic of transitions involving impurity energy levels.
About the authors
G. S. Gagis
Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
Author for correspondence.
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg
A. S. Vlasov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
R. V. Levin
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
A. E. Marichev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
M. P. Scheglov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
T. B. Popova
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
B. Ya. Ber
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
D. Yu. Kazantsev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
D. V. Chistyakov
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 197101
V. I. Kuchinskii
Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg
V. I. Vasil’ev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
