电邮这篇文章 Multiple Upsets Induced by Protons in 90-nm SRAMs
- 作者: Ivanov N.1, Lobanov O.1, Pashuk V.1, Prygunov M.2, Sizova K.3
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隶属关系:
- Konstantinov Petersburg Nuclear Physics Institute
- LLC O2 Light Systems
- LLC NPC Granat
- 期: 卷 44, 编号 12 (2018)
- 页面: 1205-1207
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208165
- DOI: https://doi.org/10.1134/S1063785019010097
- ID: 208165
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详细
The occurrence of single-event upsets (SEUs) in 90-nm SRAM integrated circuits irradiated by 1000-MeV protons has been investigated. The experimental data were analyzed and processed, and the results showed the possibility of multiple cell upsets in the integrated circuits studied.
作者简介
N. Ivanov
Konstantinov Petersburg Nuclear Physics Institute
Email: ksizova@npcgranat.ru
俄罗斯联邦, Gatchina, Leningrad oblast, 188300
O. Lobanov
Konstantinov Petersburg Nuclear Physics Institute
Email: ksizova@npcgranat.ru
俄罗斯联邦, Gatchina, Leningrad oblast, 188300
V. Pashuk
Konstantinov Petersburg Nuclear Physics Institute
Email: ksizova@npcgranat.ru
俄罗斯联邦, Gatchina, Leningrad oblast, 188300
M. Prygunov
LLC O2 Light Systems
Email: ksizova@npcgranat.ru
俄罗斯联邦, St. Petersburg, 196084
K. Sizova
LLC NPC Granat
编辑信件的主要联系方式.
Email: ksizova@npcgranat.ru
俄罗斯联邦, St. Petersburg, 194021
