Email this article Multiple Upsets Induced by Protons in 90-nm SRAMs
- Authors: Ivanov N.A.1, Lobanov O.V.1, Pashuk V.V.1, Prygunov M.O.2, Sizova K.G.3
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Affiliations:
- Konstantinov Petersburg Nuclear Physics Institute
- LLC O2 Light Systems
- LLC NPC Granat
- Issue: Vol 44, No 12 (2018)
- Pages: 1205-1207
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208165
- DOI: https://doi.org/10.1134/S1063785019010097
- ID: 208165
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Abstract
The occurrence of single-event upsets (SEUs) in 90-nm SRAM integrated circuits irradiated by 1000-MeV protons has been investigated. The experimental data were analyzed and processed, and the results showed the possibility of multiple cell upsets in the integrated circuits studied.
About the authors
N. A. Ivanov
Konstantinov Petersburg Nuclear Physics Institute
Email: ksizova@npcgranat.ru
Russian Federation, Gatchina, Leningrad oblast, 188300
O. V. Lobanov
Konstantinov Petersburg Nuclear Physics Institute
Email: ksizova@npcgranat.ru
Russian Federation, Gatchina, Leningrad oblast, 188300
V. V. Pashuk
Konstantinov Petersburg Nuclear Physics Institute
Email: ksizova@npcgranat.ru
Russian Federation, Gatchina, Leningrad oblast, 188300
M. O. Prygunov
LLC O2 Light Systems
Email: ksizova@npcgranat.ru
Russian Federation, St. Petersburg, 196084
K. G. Sizova
LLC NPC Granat
Author for correspondence.
Email: ksizova@npcgranat.ru
Russian Federation, St. Petersburg, 194021
