Multiple Upsets Induced by Protons in 90-nm SRAMs
- Autores: Ivanov N.1, Lobanov O.1, Pashuk V.1, Prygunov M.2, Sizova K.3
-
Afiliações:
- Konstantinov Petersburg Nuclear Physics Institute
- LLC O2 Light Systems
- LLC NPC Granat
- Edição: Volume 44, Nº 12 (2018)
- Páginas: 1205-1207
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208165
- DOI: https://doi.org/10.1134/S1063785019010097
- ID: 208165
Citar
Resumo
The occurrence of single-event upsets (SEUs) in 90-nm SRAM integrated circuits irradiated by 1000-MeV protons has been investigated. The experimental data were analyzed and processed, and the results showed the possibility of multiple cell upsets in the integrated circuits studied.
Sobre autores
N. Ivanov
Konstantinov Petersburg Nuclear Physics Institute
Email: ksizova@npcgranat.ru
Rússia, Gatchina, Leningrad oblast, 188300
O. Lobanov
Konstantinov Petersburg Nuclear Physics Institute
Email: ksizova@npcgranat.ru
Rússia, Gatchina, Leningrad oblast, 188300
V. Pashuk
Konstantinov Petersburg Nuclear Physics Institute
Email: ksizova@npcgranat.ru
Rússia, Gatchina, Leningrad oblast, 188300
M. Prygunov
LLC O2 Light Systems
Email: ksizova@npcgranat.ru
Rússia, St. Petersburg, 196084
K. Sizova
LLC NPC Granat
Autor responsável pela correspondência
Email: ksizova@npcgranat.ru
Rússia, St. Petersburg, 194021