Multiple Upsets Induced by Protons in 90-nm SRAMs
- Авторлар: Ivanov N.1, Lobanov O.1, Pashuk V.1, Prygunov M.2, Sizova K.3
-
Мекемелер:
- Konstantinov Petersburg Nuclear Physics Institute
- LLC O2 Light Systems
- LLC NPC Granat
- Шығарылым: Том 44, № 12 (2018)
- Беттер: 1205-1207
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208165
- DOI: https://doi.org/10.1134/S1063785019010097
- ID: 208165
Дәйексөз келтіру
Аннотация
The occurrence of single-event upsets (SEUs) in 90-nm SRAM integrated circuits irradiated by 1000-MeV protons has been investigated. The experimental data were analyzed and processed, and the results showed the possibility of multiple cell upsets in the integrated circuits studied.
Авторлар туралы
N. Ivanov
Konstantinov Petersburg Nuclear Physics Institute
Email: ksizova@npcgranat.ru
Ресей, Gatchina, Leningrad oblast, 188300
O. Lobanov
Konstantinov Petersburg Nuclear Physics Institute
Email: ksizova@npcgranat.ru
Ресей, Gatchina, Leningrad oblast, 188300
V. Pashuk
Konstantinov Petersburg Nuclear Physics Institute
Email: ksizova@npcgranat.ru
Ресей, Gatchina, Leningrad oblast, 188300
M. Prygunov
LLC O2 Light Systems
Email: ksizova@npcgranat.ru
Ресей, St. Petersburg, 196084
K. Sizova
LLC NPC Granat
Хат алмасуға жауапты Автор.
Email: ksizova@npcgranat.ru
Ресей, St. Petersburg, 194021