AlInGaPAs/GaAs/Si Heterostructures for Photoelectric Converters Fabricated by Pulsed Laser Deposition

L. S. Lunin; M. L. Lunina; A. E. Kazakova; A. S. Pashchenko; D. L. Alfimova; D. A. Arustamyan

doi:10.1134/S1063785018120519

AlInGaPAs/GaAs/Si Heterostructures for Photoelectric Converters Fabricated by Pulsed Laser Deposition

作者: Lunin L.¹^,2, Lunina M.¹, Kazakova A.², Pashchenko A.¹, Alfimova D.¹, Arustamyan D.²
隶属关系:
1. Southern Scientific Center
2. Platov South Russian Polytechnic University (NPI)
期: 卷 44, 编号 12 (2018)
页面: 1154-1156
栏目: Article
URL: https://journals.rcsi.science/1063-7850/article/view/208144
DOI: https://doi.org/10.1134/S1063785018120519
ID: 208144

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The pulsed laser deposition method has been used to fabricate AlInGaPAs/GaAs/Si nanoheterostructures for cascaded photoelectric converters operating at wavelengths in the range of 300–1300 nm. The structural and luminescent structures of AlInGaPAs nanofilms on GaAs and GaAs on Si were studied. The spectral characteristics of photocells in an AlInGaPAs/GaAs/Si triple-cascade photoelectric converter were examined.