AlInGaPAs/GaAs/Si Heterostructures for Photoelectric Converters Fabricated by Pulsed Laser Deposition

L. S. Lunin; M. L. Lunina; A. E. Kazakova; A. S. Pashchenko; D. L. Alfimova; D. A. Arustamyan

doi:10.1134/S1063785018120519

AlInGaPAs/GaAs/Si Heterostructures for Photoelectric Converters Fabricated by Pulsed Laser Deposition

Авторы: Lunin L.¹^,2, Lunina M.¹, Kazakova A.², Pashchenko A.¹, Alfimova D.¹, Arustamyan D.²
Учреждения:
1. Southern Scientific Center
2. Platov South Russian Polytechnic University (NPI)
Выпуск: Том 44, № 12 (2018)
Страницы: 1154-1156
Раздел: Article
URL: https://journals.rcsi.science/1063-7850/article/view/208144
DOI: https://doi.org/10.1134/S1063785018120519
ID: 208144

Цитировать

Полный текст

Открытый доступ
Доступ закрыт

Доступ предоставлен
Доступ закрыт

Только для подписчиков

Аннотация
Об авторах
Список литературы
Статистика

Аннотация

The pulsed laser deposition method has been used to fabricate AlInGaPAs/GaAs/Si nanoheterostructures for cascaded photoelectric converters operating at wavelengths in the range of 300–1300 nm. The structural and luminescent structures of AlInGaPAs nanofilms on GaAs and GaAs on Si were studied. The spectral characteristics of photocells in an AlInGaPAs/GaAs/Si triple-cascade photoelectric converter were examined.