Email this article AlInGaPAs/GaAs/Si Heterostructures for Photoelectric Converters Fabricated by Pulsed Laser Deposition
- Authors: Lunin L.S.1,2, Lunina M.L.1, Kazakova A.E.2, Pashchenko A.S.1, Alfimova D.L.1, Arustamyan D.A.2
-
Affiliations:
- Southern Scientific Center
- Platov South Russian Polytechnic University (NPI)
- Issue: Vol 44, No 12 (2018)
- Pages: 1154-1156
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208144
- DOI: https://doi.org/10.1134/S1063785018120519
- ID: 208144
Cite item
Open Access
Access granted
Subscription Access
Abstract
The pulsed laser deposition method has been used to fabricate AlInGaPAs/GaAs/Si nanoheterostructures for cascaded photoelectric converters operating at wavelengths in the range of 300–1300 nm. The structural and luminescent structures of AlInGaPAs nanofilms on GaAs and GaAs on Si were studied. The spectral characteristics of photocells in an AlInGaPAs/GaAs/Si triple-cascade photoelectric converter were examined.
About the authors
L. S. Lunin
Southern Scientific Center; Platov South Russian Polytechnic University (NPI)
Author for correspondence.
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428
M. L. Lunina
Southern Scientific Center
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
A. E. Kazakova
Platov South Russian Polytechnic University (NPI)
Email: lunin_ls@mail.ru
Russian Federation, Novocherkassk, Rostov oblast, 346428
A. S. Pashchenko
Southern Scientific Center
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
D. L. Alfimova
Southern Scientific Center
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
D. A. Arustamyan
Platov South Russian Polytechnic University (NPI)
Email: lunin_ls@mail.ru
Russian Federation, Novocherkassk, Rostov oblast, 346428
