AlInGaPAs/GaAs/Si Heterostructures for Photoelectric Converters Fabricated by Pulsed Laser Deposition
- Авторлар: Lunin L.1,2, Lunina M.1, Kazakova A.2, Pashchenko A.1, Alfimova D.1, Arustamyan D.2
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Мекемелер:
- Southern Scientific Center
- Platov South Russian Polytechnic University (NPI)
- Шығарылым: Том 44, № 12 (2018)
- Беттер: 1154-1156
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208144
- DOI: https://doi.org/10.1134/S1063785018120519
- ID: 208144
Дәйексөз келтіру
Аннотация
The pulsed laser deposition method has been used to fabricate AlInGaPAs/GaAs/Si nanoheterostructures for cascaded photoelectric converters operating at wavelengths in the range of 300–1300 nm. The structural and luminescent structures of AlInGaPAs nanofilms on GaAs and GaAs on Si were studied. The spectral characteristics of photocells in an AlInGaPAs/GaAs/Si triple-cascade photoelectric converter were examined.
Авторлар туралы
L. Lunin
Southern Scientific Center; Platov South Russian Polytechnic University (NPI)
Хат алмасуға жауапты Автор.
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428
M. Lunina
Southern Scientific Center
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006
A. Kazakova
Platov South Russian Polytechnic University (NPI)
Email: lunin_ls@mail.ru
Ресей, Novocherkassk, Rostov oblast, 346428
A. Pashchenko
Southern Scientific Center
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006
D. Alfimova
Southern Scientific Center
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006
D. Arustamyan
Platov South Russian Polytechnic University (NPI)
Email: lunin_ls@mail.ru
Ресей, Novocherkassk, Rostov oblast, 346428