电邮这篇文章 The Role of Excitation Photons Energy in the Photoinduced Carrier Dynamics in InGaAs/InAlAs Superlattice Heterostructures
- 作者: Buryakov A.1, Khusyainov D.1, Mishina E.1, Khabibullin R.2,3, Yachmenev A.2,3, Ponomarev D.2,3
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隶属关系:
- Russian Technological University MIREA
- Institute of Ultra High Frequency Semiconductor Electronics
- Prokhorov Institute of General Physics
- 期: 卷 44, 编号 12 (2018)
- 页面: 1115-1119
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208096
- DOI: https://doi.org/10.1134/S1063785018120192
- ID: 208096
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详细
The influence of excitation photons energy on the relaxation times of photoexcited carriers is studied. The involved relaxation mechanisms are evaluated and the reflection coefficient of the InGaAs/InAlAs superlattice heterostructures is analyzed. A model is built for the reflection coefficient of the InAlAs barrier layer, depending on the excitation photons energy. The resonance behavior of the reflection coefficient is explained.
作者简介
A. Buryakov
Russian Technological University MIREA
Email: Dinar1434429@mail.ru
俄罗斯联邦, Moscow, 119454
D. Khusyainov
Russian Technological University MIREA
编辑信件的主要联系方式.
Email: Dinar1434429@mail.ru
俄罗斯联邦, Moscow, 119454
E. Mishina
Russian Technological University MIREA
Email: Dinar1434429@mail.ru
俄罗斯联邦, Moscow, 119454
R. Khabibullin
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
俄罗斯联邦, Moscow, 117105; Moscow, 119991
A. Yachmenev
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
俄罗斯联邦, Moscow, 117105; Moscow, 119991
D. Ponomarev
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
俄罗斯联邦, Moscow, 117105; Moscow, 119991
