Отправить статью по E-mail The Role of Excitation Photons Energy in the Photoinduced Carrier Dynamics in InGaAs/InAlAs Superlattice Heterostructures
- Авторы: Buryakov A.1, Khusyainov D.1, Mishina E.1, Khabibullin R.2,3, Yachmenev A.2,3, Ponomarev D.2,3
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Учреждения:
- Russian Technological University MIREA
- Institute of Ultra High Frequency Semiconductor Electronics
- Prokhorov Institute of General Physics
- Выпуск: Том 44, № 12 (2018)
- Страницы: 1115-1119
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208096
- DOI: https://doi.org/10.1134/S1063785018120192
- ID: 208096
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Аннотация
The influence of excitation photons energy on the relaxation times of photoexcited carriers is studied. The involved relaxation mechanisms are evaluated and the reflection coefficient of the InGaAs/InAlAs superlattice heterostructures is analyzed. A model is built for the reflection coefficient of the InAlAs barrier layer, depending on the excitation photons energy. The resonance behavior of the reflection coefficient is explained.
Об авторах
A. Buryakov
Russian Technological University MIREA
Email: Dinar1434429@mail.ru
Россия, Moscow, 119454
D. Khusyainov
Russian Technological University MIREA
Автор, ответственный за переписку.
Email: Dinar1434429@mail.ru
Россия, Moscow, 119454
E. Mishina
Russian Technological University MIREA
Email: Dinar1434429@mail.ru
Россия, Moscow, 119454
R. Khabibullin
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
Россия, Moscow, 117105; Moscow, 119991
A. Yachmenev
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
Россия, Moscow, 117105; Moscow, 119991
D. Ponomarev
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
Россия, Moscow, 117105; Moscow, 119991
