Enviar artigo por via de e-mail The Role of Excitation Photons Energy in the Photoinduced Carrier Dynamics in InGaAs/InAlAs Superlattice Heterostructures
- Autores: Buryakov A.1, Khusyainov D.1, Mishina E.1, Khabibullin R.2,3, Yachmenev A.2,3, Ponomarev D.2,3
-
Afiliações:
- Russian Technological University MIREA
- Institute of Ultra High Frequency Semiconductor Electronics
- Prokhorov Institute of General Physics
- Edição: Volume 44, Nº 12 (2018)
- Páginas: 1115-1119
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208096
- DOI: https://doi.org/10.1134/S1063785018120192
- ID: 208096
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
The influence of excitation photons energy on the relaxation times of photoexcited carriers is studied. The involved relaxation mechanisms are evaluated and the reflection coefficient of the InGaAs/InAlAs superlattice heterostructures is analyzed. A model is built for the reflection coefficient of the InAlAs barrier layer, depending on the excitation photons energy. The resonance behavior of the reflection coefficient is explained.
Sobre autores
A. Buryakov
Russian Technological University MIREA
Email: Dinar1434429@mail.ru
Rússia, Moscow, 119454
D. Khusyainov
Russian Technological University MIREA
Autor responsável pela correspondência
Email: Dinar1434429@mail.ru
Rússia, Moscow, 119454
E. Mishina
Russian Technological University MIREA
Email: Dinar1434429@mail.ru
Rússia, Moscow, 119454
R. Khabibullin
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
Rússia, Moscow, 117105; Moscow, 119991
A. Yachmenev
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
Rússia, Moscow, 117105; Moscow, 119991
D. Ponomarev
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
Rússia, Moscow, 117105; Moscow, 119991
