Email this article The Role of Excitation Photons Energy in the Photoinduced Carrier Dynamics in InGaAs/InAlAs Superlattice Heterostructures
- Authors: Buryakov A.M.1, Khusyainov D.I.1, Mishina E.D.1, Khabibullin R.A.2,3, Yachmenev A.E.2,3, Ponomarev D.S.2,3
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Affiliations:
- Russian Technological University MIREA
- Institute of Ultra High Frequency Semiconductor Electronics
- Prokhorov Institute of General Physics
- Issue: Vol 44, No 12 (2018)
- Pages: 1115-1119
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208096
- DOI: https://doi.org/10.1134/S1063785018120192
- ID: 208096
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Abstract
The influence of excitation photons energy on the relaxation times of photoexcited carriers is studied. The involved relaxation mechanisms are evaluated and the reflection coefficient of the InGaAs/InAlAs superlattice heterostructures is analyzed. A model is built for the reflection coefficient of the InAlAs barrier layer, depending on the excitation photons energy. The resonance behavior of the reflection coefficient is explained.
About the authors
A. M. Buryakov
Russian Technological University MIREA
Email: Dinar1434429@mail.ru
Russian Federation, Moscow, 119454
D. I. Khusyainov
Russian Technological University MIREA
Author for correspondence.
Email: Dinar1434429@mail.ru
Russian Federation, Moscow, 119454
E. D. Mishina
Russian Technological University MIREA
Email: Dinar1434429@mail.ru
Russian Federation, Moscow, 119454
R. A. Khabibullin
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
Russian Federation, Moscow, 117105; Moscow, 119991
A. E. Yachmenev
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
Russian Federation, Moscow, 117105; Moscow, 119991
D. S. Ponomarev
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
Russian Federation, Moscow, 117105; Moscow, 119991
