电邮这篇文章 Photovoltaic Characteristics of AlGaAs-Based LEDs
- 作者: Sokolovskii A.1
-
隶属关系:
- Kotelnikov Institute of Radioengineering and Electronics (Fryazino Branch)
- 期: 卷 44, 编号 4 (2018)
- 页面: 341-343
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207602
- DOI: https://doi.org/10.1134/S1063785018040259
- ID: 207602
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详细
Photovoltaic characteristics of more than 20 types of AlGaAs-based light-emitting diodes operating in the 830- to 970-nm wavelength range have been considered. It is established that AlxGa1 – xAs semiconductor structures employed in these devices can also be used for manufacturing photovoltaic converters of monochromatic radiation with quite high efficiency.
作者简介
A. Sokolovskii
Kotelnikov Institute of Radioengineering and Electronics (Fryazino Branch)
编辑信件的主要联系方式.
Email: asokol@list.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141190
