Email this article Photovoltaic Characteristics of AlGaAs-Based LEDs
- Authors: Sokolovskii A.A.1
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Affiliations:
- Kotelnikov Institute of Radioengineering and Electronics (Fryazino Branch)
- Issue: Vol 44, No 4 (2018)
- Pages: 341-343
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207602
- DOI: https://doi.org/10.1134/S1063785018040259
- ID: 207602
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Abstract
Photovoltaic characteristics of more than 20 types of AlGaAs-based light-emitting diodes operating in the 830- to 970-nm wavelength range have been considered. It is established that AlxGa1 – xAs semiconductor structures employed in these devices can also be used for manufacturing photovoltaic converters of monochromatic radiation with quite high efficiency.
About the authors
A. A. Sokolovskii
Kotelnikov Institute of Radioengineering and Electronics (Fryazino Branch)
Author for correspondence.
Email: asokol@list.ru
Russian Federation, Fryazino, Moscow oblast, 141190
