Отправить статью по E-mail Photovoltaic Characteristics of AlGaAs-Based LEDs
- Авторы: Sokolovskii A.1
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Учреждения:
- Kotelnikov Institute of Radioengineering and Electronics (Fryazino Branch)
- Выпуск: Том 44, № 4 (2018)
- Страницы: 341-343
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207602
- DOI: https://doi.org/10.1134/S1063785018040259
- ID: 207602
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Аннотация
Photovoltaic characteristics of more than 20 types of AlGaAs-based light-emitting diodes operating in the 830- to 970-nm wavelength range have been considered. It is established that AlxGa1 – xAs semiconductor structures employed in these devices can also be used for manufacturing photovoltaic converters of monochromatic radiation with quite high efficiency.
Об авторах
A. Sokolovskii
Kotelnikov Institute of Radioengineering and Electronics (Fryazino Branch)
Автор, ответственный за переписку.
Email: asokol@list.ru
Россия, Fryazino, Moscow oblast, 141190
