Мақаланы E-mail арқылы жіберу Photovoltaic Characteristics of AlGaAs-Based LEDs
- Авторлар: Sokolovskii A.1
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Мекемелер:
- Kotelnikov Institute of Radioengineering and Electronics (Fryazino Branch)
- Шығарылым: Том 44, № 4 (2018)
- Беттер: 341-343
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207602
- DOI: https://doi.org/10.1134/S1063785018040259
- ID: 207602
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
Photovoltaic characteristics of more than 20 types of AlGaAs-based light-emitting diodes operating in the 830- to 970-nm wavelength range have been considered. It is established that AlxGa1 – xAs semiconductor structures employed in these devices can also be used for manufacturing photovoltaic converters of monochromatic radiation with quite high efficiency.
Авторлар туралы
A. Sokolovskii
Kotelnikov Institute of Radioengineering and Electronics (Fryazino Branch)
Хат алмасуға жауапты Автор.
Email: asokol@list.ru
Ресей, Fryazino, Moscow oblast, 141190
