Heterobarrier Varactors with Nonuniformly Doped Modulation Layers
- Авторы: Maleev N.1, Bobrov M.1, Kuzmenkov A.2, Vasil’ev A.2, Kulagina M.1, Guseva Y.1, Blokhin S.1, Ustinov V.2,3
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Учреждения:
- Ioffe Institute
- Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences
- Saint Petersburg Electrotechnical University “LETI”
- Выпуск: Том 45, № 10 (2019)
- Страницы: 1063-1066
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208465
- DOI: https://doi.org/10.1134/S1063785019100250
- ID: 208465
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Аннотация
Optimum shape of the capacitance–voltage (C–V) characteristic is a critical parameter determining the efficiency of frequency multiplication in heterobarrier varactors (HBVs) operating in the millimeter and submillimeter frequency ranges. A numerical model for calculating the C–V characteristics and leakage currents of HBV heterostructures with arbitrary composition and doping profiles has been verified on the basis of published and original experimental data. A specially designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded by nonuniformly doped n-InGaAs modulation layers has been grown by molecular beam epitaxy on InP substrate. Prototype HBVs manufactured using the proposed heterostructure demonstrated a nearly cosine shape of the C–V curve at bias voltages up to 2 V, increased overlap capacitance, and low leakage currents.
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Об авторах
N. Maleev
Ioffe Institute
Автор, ответственный за переписку.
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
M. Bobrov
Ioffe Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
A. Kuzmenkov
Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
A. Vasil’ev
Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
M. Kulagina
Ioffe Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
Yu. Guseva
Ioffe Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
S. Blokhin
Ioffe Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
V. Ustinov
Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences; Saint Petersburg Electrotechnical University “LETI”
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197022