Heterobarrier Varactors with Nonuniformly Doped Modulation Layers
- Authors: Maleev N.A.1, Bobrov M.A.1, Kuzmenkov A.G.2, Vasil’ev A.P.2, Kulagina M.M.1, Guseva Y.A.1, Blokhin S.A.1, Ustinov V.M.2,3
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Affiliations:
- Ioffe Institute
- Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences
- Saint Petersburg Electrotechnical University “LETI”
- Issue: Vol 45, No 10 (2019)
- Pages: 1063-1066
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208465
- DOI: https://doi.org/10.1134/S1063785019100250
- ID: 208465
Cite item
Abstract
Optimum shape of the capacitance–voltage (C–V) characteristic is a critical parameter determining the efficiency of frequency multiplication in heterobarrier varactors (HBVs) operating in the millimeter and submillimeter frequency ranges. A numerical model for calculating the C–V characteristics and leakage currents of HBV heterostructures with arbitrary composition and doping profiles has been verified on the basis of published and original experimental data. A specially designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded by nonuniformly doped n-InGaAs modulation layers has been grown by molecular beam epitaxy on InP substrate. Prototype HBVs manufactured using the proposed heterostructure demonstrated a nearly cosine shape of the C–V curve at bias voltages up to 2 V, increased overlap capacitance, and low leakage currents.
About the authors
N. A. Maleev
Ioffe Institute
Author for correspondence.
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. A. Bobrov
Ioffe Institute
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. G. Kuzmenkov
Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. P. Vasil’ev
Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. M. Kulagina
Ioffe Institute
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. A. Guseva
Ioffe Institute
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. A. Blokhin
Ioffe Institute
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. M. Ustinov
Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences; Saint Petersburg Electrotechnical University “LETI”
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197022