Heterobarrier Varactors with Nonuniformly Doped Modulation Layers
- Autores: Maleev N.1, Bobrov M.1, Kuzmenkov A.2, Vasil’ev A.2, Kulagina M.1, Guseva Y.1, Blokhin S.1, Ustinov V.2,3
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Afiliações:
- Ioffe Institute
- Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences
- Saint Petersburg Electrotechnical University “LETI”
- Edição: Volume 45, Nº 10 (2019)
- Páginas: 1063-1066
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208465
- DOI: https://doi.org/10.1134/S1063785019100250
- ID: 208465
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Resumo
Optimum shape of the capacitance–voltage (C–V) characteristic is a critical parameter determining the efficiency of frequency multiplication in heterobarrier varactors (HBVs) operating in the millimeter and submillimeter frequency ranges. A numerical model for calculating the C–V characteristics and leakage currents of HBV heterostructures with arbitrary composition and doping profiles has been verified on the basis of published and original experimental data. A specially designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded by nonuniformly doped n-InGaAs modulation layers has been grown by molecular beam epitaxy on InP substrate. Prototype HBVs manufactured using the proposed heterostructure demonstrated a nearly cosine shape of the C–V curve at bias voltages up to 2 V, increased overlap capacitance, and low leakage currents.
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Sobre autores
N. Maleev
Ioffe Institute
Autor responsável pela correspondência
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
M. Bobrov
Ioffe Institute
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
A. Kuzmenkov
Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
A. Vasil’ev
Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
M. Kulagina
Ioffe Institute
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
Yu. Guseva
Ioffe Institute
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
S. Blokhin
Ioffe Institute
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
V. Ustinov
Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences; Saint Petersburg Electrotechnical University “LETI”
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197022