AlInGaPAs/GaAs/Si Heterostructures for Photoelectric Converters Fabricated by Pulsed Laser Deposition
- Autores: Lunin L.1,2, Lunina M.1, Kazakova A.2, Pashchenko A.1, Alfimova D.1, Arustamyan D.2
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Afiliações:
- Southern Scientific Center
- Platov South Russian Polytechnic University (NPI)
- Edição: Volume 44, Nº 12 (2018)
- Páginas: 1154-1156
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208144
- DOI: https://doi.org/10.1134/S1063785018120519
- ID: 208144
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Resumo
The pulsed laser deposition method has been used to fabricate AlInGaPAs/GaAs/Si nanoheterostructures for cascaded photoelectric converters operating at wavelengths in the range of 300–1300 nm. The structural and luminescent structures of AlInGaPAs nanofilms on GaAs and GaAs on Si were studied. The spectral characteristics of photocells in an AlInGaPAs/GaAs/Si triple-cascade photoelectric converter were examined.
Sobre autores
L. Lunin
Southern Scientific Center; Platov South Russian Polytechnic University (NPI)
Autor responsável pela correspondência
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428
M. Lunina
Southern Scientific Center
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
A. Kazakova
Platov South Russian Polytechnic University (NPI)
Email: lunin_ls@mail.ru
Rússia, Novocherkassk, Rostov oblast, 346428
A. Pashchenko
Southern Scientific Center
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
D. Alfimova
Southern Scientific Center
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
D. Arustamyan
Platov South Russian Polytechnic University (NPI)
Email: lunin_ls@mail.ru
Rússia, Novocherkassk, Rostov oblast, 346428