Мақаланы E-mail арқылы жіберу The Role of Excitation Photons Energy in the Photoinduced Carrier Dynamics in InGaAs/InAlAs Superlattice Heterostructures
- Авторлар: Buryakov A.1, Khusyainov D.1, Mishina E.1, Khabibullin R.2,3, Yachmenev A.2,3, Ponomarev D.2,3
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Мекемелер:
- Russian Technological University MIREA
- Institute of Ultra High Frequency Semiconductor Electronics
- Prokhorov Institute of General Physics
- Шығарылым: Том 44, № 12 (2018)
- Беттер: 1115-1119
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208096
- DOI: https://doi.org/10.1134/S1063785018120192
- ID: 208096
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The influence of excitation photons energy on the relaxation times of photoexcited carriers is studied. The involved relaxation mechanisms are evaluated and the reflection coefficient of the InGaAs/InAlAs superlattice heterostructures is analyzed. A model is built for the reflection coefficient of the InAlAs barrier layer, depending on the excitation photons energy. The resonance behavior of the reflection coefficient is explained.
Авторлар туралы
A. Buryakov
Russian Technological University MIREA
Email: Dinar1434429@mail.ru
Ресей, Moscow, 119454
D. Khusyainov
Russian Technological University MIREA
Хат алмасуға жауапты Автор.
Email: Dinar1434429@mail.ru
Ресей, Moscow, 119454
E. Mishina
Russian Technological University MIREA
Email: Dinar1434429@mail.ru
Ресей, Moscow, 119454
R. Khabibullin
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
Ресей, Moscow, 117105; Moscow, 119991
A. Yachmenev
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
Ресей, Moscow, 117105; Moscow, 119991
D. Ponomarev
Institute of Ultra High Frequency Semiconductor Electronics; Prokhorov Institute of General Physics
Email: Dinar1434429@mail.ru
Ресей, Moscow, 117105; Moscow, 119991
