Heterobarrier Varactors with Nonuniformly Doped Modulation Layers
- Авторлар: Maleev N.1, Bobrov M.1, Kuzmenkov A.2, Vasil’ev A.2, Kulagina M.1, Guseva Y.1, Blokhin S.1, Ustinov V.2,3
-
Мекемелер:
- Ioffe Institute
- Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences
- Saint Petersburg Electrotechnical University “LETI”
- Шығарылым: Том 45, № 10 (2019)
- Беттер: 1063-1066
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208465
- DOI: https://doi.org/10.1134/S1063785019100250
- ID: 208465
Дәйексөз келтіру
Аннотация
Optimum shape of the capacitance–voltage (C–V) characteristic is a critical parameter determining the efficiency of frequency multiplication in heterobarrier varactors (HBVs) operating in the millimeter and submillimeter frequency ranges. A numerical model for calculating the C–V characteristics and leakage currents of HBV heterostructures with arbitrary composition and doping profiles has been verified on the basis of published and original experimental data. A specially designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded by nonuniformly doped n-InGaAs modulation layers has been grown by molecular beam epitaxy on InP substrate. Prototype HBVs manufactured using the proposed heterostructure demonstrated a nearly cosine shape of the C–V curve at bias voltages up to 2 V, increased overlap capacitance, and low leakage currents.
Негізгі сөздер
Авторлар туралы
N. Maleev
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
M. Bobrov
Ioffe Institute
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
A. Kuzmenkov
Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
A. Vasil’ev
Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
M. Kulagina
Ioffe Institute
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
Yu. Guseva
Ioffe Institute
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
S. Blokhin
Ioffe Institute
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
V. Ustinov
Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences; Saint Petersburg Electrotechnical University “LETI”
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197022