Enviar artigo por via de e-mail Field effect in a graphene oxide transistor for proton and electron–hole conductivities
- Autores: Smirnov V.1, Mokrushin A.2, Vasil’ev V.1, Denisov N.1, Denisova K.3
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Afiliações:
- Institute of Problems of Chemical Physics
- Institute of Microelectronics Technology and High Purity Materials
- Moscow State University
- Edição: Volume 42, Nº 7 (2016)
- Páginas: 671-673
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/199901
- DOI: https://doi.org/10.1134/S1063785016070129
- ID: 199901
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Resumo
Proton (wet atmosphere) and electron (reduced graphene oxide) conductivities can be observed in graphene oxide films. The field effect in a graphene oxide transistor for different conductivity types has been discovered and investigated.
Sobre autores
V. Smirnov
Institute of Problems of Chemical Physics
Autor responsável pela correspondência
Email: vas@icp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
A. Mokrushin
Institute of Microelectronics Technology and High Purity Materials
Email: vas@icp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
V. Vasil’ev
Institute of Problems of Chemical Physics
Email: vas@icp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
N. Denisov
Institute of Problems of Chemical Physics
Email: vas@icp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
K. Denisova
Moscow State University
Email: vas@icp.ac.ru
Rússia, Moscow, 119991
