Email this article Field effect in a graphene oxide transistor for proton and electron–hole conductivities
- Authors: Smirnov V.A.1, Mokrushin A.D.2, Vasil’ev V.P.1, Denisov N.N.1, Denisova K.N.3
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Affiliations:
- Institute of Problems of Chemical Physics
- Institute of Microelectronics Technology and High Purity Materials
- Moscow State University
- Issue: Vol 42, No 7 (2016)
- Pages: 671-673
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/199901
- DOI: https://doi.org/10.1134/S1063785016070129
- ID: 199901
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Abstract
Proton (wet atmosphere) and electron (reduced graphene oxide) conductivities can be observed in graphene oxide films. The field effect in a graphene oxide transistor for different conductivity types has been discovered and investigated.
About the authors
V. A. Smirnov
Institute of Problems of Chemical Physics
Author for correspondence.
Email: vas@icp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
A. D. Mokrushin
Institute of Microelectronics Technology and High Purity Materials
Email: vas@icp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
V. P. Vasil’ev
Institute of Problems of Chemical Physics
Email: vas@icp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
N. N. Denisov
Institute of Problems of Chemical Physics
Email: vas@icp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
K. N. Denisova
Moscow State University
Email: vas@icp.ac.ru
Russian Federation, Moscow, 119991
