Enviar artigo por via de e-mail Nonlinear room-temperature Hall effect in n-InFeAs layers
- Autores: Kudrin A.1,2, Danilov Y.1,2, Lesnikov V.1, Pitirimova E.2
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Afiliações:
- Physicotechnical Research Institute
- Lobachevsky State University of Nizhny Novgorod
- Edição: Volume 42, Nº 1 (2016)
- Páginas: 88-92
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/196908
- DOI: https://doi.org/10.1134/S1063785016010259
- ID: 196908
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Resumo
Ferromagnetic n-InFeAs layers have been obtained by the method of laser ablation in vacuum. The InFeAs layers on GaAs(111) substrates exhibit nonlinear (with respect to magnetic field) Hall effect up to room temperatures. It is established that the crystallographic orientation of the GaAs substrates influences the magnetic properties of InFeAs layers.
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Sobre autores
A. Kudrin
Physicotechnical Research Institute; Lobachevsky State University of Nizhny Novgorod
Autor responsável pela correspondência
Email: kudrin@nifti.unn.ru
Rússia, Nizhny Novgorod, 603600; Nizhny Novgorod, 603600
Yu. Danilov
Physicotechnical Research Institute; Lobachevsky State University of Nizhny Novgorod
Email: kudrin@nifti.unn.ru
Rússia, Nizhny Novgorod, 603600; Nizhny Novgorod, 603600
V. Lesnikov
Physicotechnical Research Institute
Email: kudrin@nifti.unn.ru
Rússia, Nizhny Novgorod, 603600
E. Pitirimova
Lobachevsky State University of Nizhny Novgorod
Email: kudrin@nifti.unn.ru
Rússia, Nizhny Novgorod, 603600
