Nonlinear room-temperature Hall effect in n-InFeAs layers
- Авторы: Kudrin A.V.1,2, Danilov Y.A.1,2, Lesnikov V.P.1, Pitirimova E.A.2
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Учреждения:
- Physicotechnical Research Institute
- Lobachevsky State University of Nizhny Novgorod
- Выпуск: Том 42, № 1 (2016)
- Страницы: 88-92
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/196908
- DOI: https://doi.org/10.1134/S1063785016010259
- ID: 196908
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Аннотация
Ferromagnetic n-InFeAs layers have been obtained by the method of laser ablation in vacuum. The InFeAs layers on GaAs(111) substrates exhibit nonlinear (with respect to magnetic field) Hall effect up to room temperatures. It is established that the crystallographic orientation of the GaAs substrates influences the magnetic properties of InFeAs layers.
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Об авторах
A. Kudrin
Physicotechnical Research Institute; Lobachevsky State University of Nizhny Novgorod
Автор, ответственный за переписку.
Email: kudrin@nifti.unn.ru
Россия, Nizhny Novgorod, 603600; Nizhny Novgorod, 603600
Yu. Danilov
Physicotechnical Research Institute; Lobachevsky State University of Nizhny Novgorod
Email: kudrin@nifti.unn.ru
Россия, Nizhny Novgorod, 603600; Nizhny Novgorod, 603600
V. Lesnikov
Physicotechnical Research Institute
Email: kudrin@nifti.unn.ru
Россия, Nizhny Novgorod, 603600
E. Pitirimova
Lobachevsky State University of Nizhny Novgorod
Email: kudrin@nifti.unn.ru
Россия, Nizhny Novgorod, 603600
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