Email this article Nonlinear room-temperature Hall effect in n-InFeAs layers
- Authors: Kudrin A.V.1,2, Danilov Y.A.1,2, Lesnikov V.P.1, Pitirimova E.A.2
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Affiliations:
- Physicotechnical Research Institute
- Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 42, No 1 (2016)
- Pages: 88-92
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/196908
- DOI: https://doi.org/10.1134/S1063785016010259
- ID: 196908
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Abstract
Ferromagnetic n-InFeAs layers have been obtained by the method of laser ablation in vacuum. The InFeAs layers on GaAs(111) substrates exhibit nonlinear (with respect to magnetic field) Hall effect up to room temperatures. It is established that the crystallographic orientation of the GaAs substrates influences the magnetic properties of InFeAs layers.
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About the authors
A. V. Kudrin
Physicotechnical Research Institute; Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: kudrin@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603600; Nizhny Novgorod, 603600
Yu. A. Danilov
Physicotechnical Research Institute; Lobachevsky State University of Nizhny Novgorod
Email: kudrin@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603600; Nizhny Novgorod, 603600
V. P. Lesnikov
Physicotechnical Research Institute
Email: kudrin@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603600
E. A. Pitirimova
Lobachevsky State University of Nizhny Novgorod
Email: kudrin@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603600
