Мақаланы E-mail арқылы жіберу Nonlinear room-temperature Hall effect in n-InFeAs layers
- Авторлар: Kudrin A.1,2, Danilov Y.1,2, Lesnikov V.1, Pitirimova E.2
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Мекемелер:
- Physicotechnical Research Institute
- Lobachevsky State University of Nizhny Novgorod
- Шығарылым: Том 42, № 1 (2016)
- Беттер: 88-92
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/196908
- DOI: https://doi.org/10.1134/S1063785016010259
- ID: 196908
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Аннотация
Ferromagnetic n-InFeAs layers have been obtained by the method of laser ablation in vacuum. The InFeAs layers on GaAs(111) substrates exhibit nonlinear (with respect to magnetic field) Hall effect up to room temperatures. It is established that the crystallographic orientation of the GaAs substrates influences the magnetic properties of InFeAs layers.
Негізгі сөздер
Авторлар туралы
A. Kudrin
Physicotechnical Research Institute; Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: kudrin@nifti.unn.ru
Ресей, Nizhny Novgorod, 603600; Nizhny Novgorod, 603600
Yu. Danilov
Physicotechnical Research Institute; Lobachevsky State University of Nizhny Novgorod
Email: kudrin@nifti.unn.ru
Ресей, Nizhny Novgorod, 603600; Nizhny Novgorod, 603600
V. Lesnikov
Physicotechnical Research Institute
Email: kudrin@nifti.unn.ru
Ресей, Nizhny Novgorod, 603600
E. Pitirimova
Lobachevsky State University of Nizhny Novgorod
Email: kudrin@nifti.unn.ru
Ресей, Nizhny Novgorod, 603600
