电邮这篇文章 Nonlinear room-temperature Hall effect in n-InFeAs layers
- 作者: Kudrin A.1,2, Danilov Y.1,2, Lesnikov V.1, Pitirimova E.2
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隶属关系:
- Physicotechnical Research Institute
- Lobachevsky State University of Nizhny Novgorod
- 期: 卷 42, 编号 1 (2016)
- 页面: 88-92
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/196908
- DOI: https://doi.org/10.1134/S1063785016010259
- ID: 196908
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详细
Ferromagnetic n-InFeAs layers have been obtained by the method of laser ablation in vacuum. The InFeAs layers on GaAs(111) substrates exhibit nonlinear (with respect to magnetic field) Hall effect up to room temperatures. It is established that the crystallographic orientation of the GaAs substrates influences the magnetic properties of InFeAs layers.
作者简介
A. Kudrin
Physicotechnical Research Institute; Lobachevsky State University of Nizhny Novgorod
编辑信件的主要联系方式.
Email: kudrin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603600; Nizhny Novgorod, 603600
Yu. Danilov
Physicotechnical Research Institute; Lobachevsky State University of Nizhny Novgorod
Email: kudrin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603600; Nizhny Novgorod, 603600
V. Lesnikov
Physicotechnical Research Institute
Email: kudrin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603600
E. Pitirimova
Lobachevsky State University of Nizhny Novgorod
Email: kudrin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603600
