Ohmic Contacts to Europium Oxide for Spintronic Devices
- Авторлар: Andreev A.1, Grishchenko Y.1, Chernykh I.1, Zanaveskin M.1, Lobanovich E.1
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Мекемелер:
- National Research Center Kurchatov Institute
- Шығарылым: Том 45, № 4 (2019)
- Беттер: 345-347
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208273
- DOI: https://doi.org/10.1134/S1063785019040047
- ID: 208273
Дәйексөз келтіру
Аннотация
A technique for in situ fabrication of aluminum-based Ohmic contacts to EuO by molecular-beam epitaxy is proposed. These contacts have a linear current–voltage curve and a contact resistance of 0.55 Ω mm and are stable in air. This suggests that the proposed technique holds promise for spintronic applications.
Авторлар туралы
A. Andreev
National Research Center Kurchatov Institute
Хат алмасуға жауапты Автор.
Email: andreev_aa@nrcki.ru
Ресей, Moscow, 123182
Yu. Grishchenko
National Research Center Kurchatov Institute
Email: andreev_aa@nrcki.ru
Ресей, Moscow, 123182
I. Chernykh
National Research Center Kurchatov Institute
Email: andreev_aa@nrcki.ru
Ресей, Moscow, 123182
M. Zanaveskin
National Research Center Kurchatov Institute
Email: andreev_aa@nrcki.ru
Ресей, Moscow, 123182
E. Lobanovich
National Research Center Kurchatov Institute
Email: andreev_aa@nrcki.ru
Ресей, Moscow, 123182