Ohmic Contacts to Europium Oxide for Spintronic Devices
- Authors: Andreev A.A.1, Grishchenko Y.V.1, Chernykh I.A.1, Zanaveskin M.L.1, Lobanovich E.F.1
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Affiliations:
- National Research Center Kurchatov Institute
- Issue: Vol 45, No 4 (2019)
- Pages: 345-347
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208273
- DOI: https://doi.org/10.1134/S1063785019040047
- ID: 208273
Cite item
Abstract
A technique for in situ fabrication of aluminum-based Ohmic contacts to EuO by molecular-beam epitaxy is proposed. These contacts have a linear current–voltage curve and a contact resistance of 0.55 Ω mm and are stable in air. This suggests that the proposed technique holds promise for spintronic applications.
About the authors
A. A. Andreev
National Research Center Kurchatov Institute
Author for correspondence.
Email: andreev_aa@nrcki.ru
Russian Federation, Moscow, 123182
Yu. V. Grishchenko
National Research Center Kurchatov Institute
Email: andreev_aa@nrcki.ru
Russian Federation, Moscow, 123182
I. A. Chernykh
National Research Center Kurchatov Institute
Email: andreev_aa@nrcki.ru
Russian Federation, Moscow, 123182
M. L. Zanaveskin
National Research Center Kurchatov Institute
Email: andreev_aa@nrcki.ru
Russian Federation, Moscow, 123182
E. F. Lobanovich
National Research Center Kurchatov Institute
Email: andreev_aa@nrcki.ru
Russian Federation, Moscow, 123182