Ohmic Contacts to Europium Oxide for Spintronic Devices
- 作者: Andreev A.1, Grishchenko Y.1, Chernykh I.1, Zanaveskin M.1, Lobanovich E.1
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隶属关系:
- National Research Center Kurchatov Institute
- 期: 卷 45, 编号 4 (2019)
- 页面: 345-347
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208273
- DOI: https://doi.org/10.1134/S1063785019040047
- ID: 208273
如何引用文章
详细
A technique for in situ fabrication of aluminum-based Ohmic contacts to EuO by molecular-beam epitaxy is proposed. These contacts have a linear current–voltage curve and a contact resistance of 0.55 Ω mm and are stable in air. This suggests that the proposed technique holds promise for spintronic applications.
作者简介
A. Andreev
National Research Center Kurchatov Institute
编辑信件的主要联系方式.
Email: andreev_aa@nrcki.ru
俄罗斯联邦, Moscow, 123182
Yu. Grishchenko
National Research Center Kurchatov Institute
Email: andreev_aa@nrcki.ru
俄罗斯联邦, Moscow, 123182
I. Chernykh
National Research Center Kurchatov Institute
Email: andreev_aa@nrcki.ru
俄罗斯联邦, Moscow, 123182
M. Zanaveskin
National Research Center Kurchatov Institute
Email: andreev_aa@nrcki.ru
俄罗斯联邦, Moscow, 123182
E. Lobanovich
National Research Center Kurchatov Institute
Email: andreev_aa@nrcki.ru
俄罗斯联邦, Moscow, 123182