Email this article The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
- Authors: Nikitina E.V.1,2, Lazarenko A.A.1, Pirogov E.V.1, Sobolev M.S.1, Berezovskaya T.N.1
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Affiliations:
- St. Petersburg Academic University, Russian Academy of Sciences
- Nanotechnology Research and Education Center
- Issue: Vol 43, No 9 (2017)
- Pages: 863-865
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/206098
- DOI: https://doi.org/10.1134/S1063785017090243
- ID: 206098
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Abstract
We have studied the influence of metamorphic-buffer layer design on the temporal (storage) stability of electrical characteristics of InGaAs/GaAs metamorphic high-electron-mobility transistors (MHEMTs). Using measurements of the Hall effect, it is established that transistor heterostructures with a metamorphic buffer based on In(Al)GaAs/InAlAs superlattices possess maximum values of the concentration and mobility of electrons in the MHEMT channel and show minimum susceptibility to temporal degradation.
About the authors
E. V. Nikitina
St. Petersburg Academic University, Russian Academy of Sciences; Nanotechnology Research and Education Center
Email: alexashpigun@yandex.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
A. A. Lazarenko
St. Petersburg Academic University, Russian Academy of Sciences
Author for correspondence.
Email: alexashpigun@yandex.ru
Russian Federation, St. Petersburg, 194021
E. V. Pirogov
St. Petersburg Academic University, Russian Academy of Sciences
Email: alexashpigun@yandex.ru
Russian Federation, St. Petersburg, 194021
M. S. Sobolev
St. Petersburg Academic University, Russian Academy of Sciences
Email: alexashpigun@yandex.ru
Russian Federation, St. Petersburg, 194021
T. N. Berezovskaya
St. Petersburg Academic University, Russian Academy of Sciences
Email: alexashpigun@yandex.ru
Russian Federation, St. Petersburg, 194021
