Отправить статью по E-mail The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
- Авторы: Nikitina E.V.1,2, Lazarenko A.A.1, Pirogov E.V.1, Sobolev M.S.1, Berezovskaya T.N.1
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Учреждения:
- St. Petersburg Academic University, Russian Academy of Sciences
- Nanotechnology Research and Education Center
- Выпуск: Том 43, № 9 (2017)
- Страницы: 863-865
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/206098
- DOI: https://doi.org/10.1134/S1063785017090243
- ID: 206098
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Аннотация
We have studied the influence of metamorphic-buffer layer design on the temporal (storage) stability of electrical characteristics of InGaAs/GaAs metamorphic high-electron-mobility transistors (MHEMTs). Using measurements of the Hall effect, it is established that transistor heterostructures with a metamorphic buffer based on In(Al)GaAs/InAlAs superlattices possess maximum values of the concentration and mobility of electrons in the MHEMT channel and show minimum susceptibility to temporal degradation.
Об авторах
E. Nikitina
St. Petersburg Academic University, Russian Academy of Sciences; Nanotechnology Research and Education Center
Email: alexashpigun@yandex.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194021
A. Lazarenko
St. Petersburg Academic University, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: alexashpigun@yandex.ru
Россия, St. Petersburg, 194021
E. Pirogov
St. Petersburg Academic University, Russian Academy of Sciences
Email: alexashpigun@yandex.ru
Россия, St. Petersburg, 194021
M. Sobolev
St. Petersburg Academic University, Russian Academy of Sciences
Email: alexashpigun@yandex.ru
Россия, St. Petersburg, 194021
T. Berezovskaya
St. Petersburg Academic University, Russian Academy of Sciences
Email: alexashpigun@yandex.ru
Россия, St. Petersburg, 194021
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