Мақаланы E-mail арқылы жіберу The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
- Авторлар: Nikitina E.1,2, Lazarenko A.1, Pirogov E.1, Sobolev M.1, Berezovskaya T.1
-
Мекемелер:
- St. Petersburg Academic University, Russian Academy of Sciences
- Nanotechnology Research and Education Center
- Шығарылым: Том 43, № 9 (2017)
- Беттер: 863-865
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/206098
- DOI: https://doi.org/10.1134/S1063785017090243
- ID: 206098
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
We have studied the influence of metamorphic-buffer layer design on the temporal (storage) stability of electrical characteristics of InGaAs/GaAs metamorphic high-electron-mobility transistors (MHEMTs). Using measurements of the Hall effect, it is established that transistor heterostructures with a metamorphic buffer based on In(Al)GaAs/InAlAs superlattices possess maximum values of the concentration and mobility of electrons in the MHEMT channel and show minimum susceptibility to temporal degradation.
Авторлар туралы
E. Nikitina
St. Petersburg Academic University, Russian Academy of Sciences; Nanotechnology Research and Education Center
Email: alexashpigun@yandex.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
A. Lazarenko
St. Petersburg Academic University, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: alexashpigun@yandex.ru
Ресей, St. Petersburg, 194021
E. Pirogov
St. Petersburg Academic University, Russian Academy of Sciences
Email: alexashpigun@yandex.ru
Ресей, St. Petersburg, 194021
M. Sobolev
St. Petersburg Academic University, Russian Academy of Sciences
Email: alexashpigun@yandex.ru
Ресей, St. Petersburg, 194021
T. Berezovskaya
St. Petersburg Academic University, Russian Academy of Sciences
Email: alexashpigun@yandex.ru
Ресей, St. Petersburg, 194021
