Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion
- 作者: Tarasov A.1, Ishchenko D.1, Akimov A.1, Akhundov I.1, Golyashov V.1, Klimov A.1, Pashchin N.1, Suprun S.1, Fedosenko E.1, Sherstyakova V.1, Tereshchenko O.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- 期: 卷 64, 编号 11 (2019)
- 页面: 1704-1708
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7842/article/view/204700
- DOI: https://doi.org/10.1134/S1063784219110264
- ID: 204700
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详细
High-resistance Pb1 –xSnxTe〈In〉 layers grown by molecular beam epitaxy on BaF2(111) substrates with compositions close to band inversion have been investigated. The I–V characteristics and relaxation dependences of the photocurrent of the structures in dependence on the chemical surface treatment and subsequent exposure of the samples in air have been examined. It has been observed that the characteristics significantly transform depending on the physicochemical surface state. It has been found that the chemical surface treatment in the hydrochloric acid solution in isopropyl alcohol leads to an increase in the current by up to four orders of magnitude with the subsequent recovery of the I–V characteristics upon exposure of the samples in air for several days.
作者简介
A. Tarasov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
俄罗斯联邦, Novosibirsk, 660090
D. Ishchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: miracle4348@gmail.com
俄罗斯联邦, Novosibirsk, 660090
A. Akimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
俄罗斯联邦, Novosibirsk, 660090
I. Akhundov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
俄罗斯联邦, Novosibirsk, 660090
V. Golyashov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
俄罗斯联邦, Novosibirsk, 660090
A. Klimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
俄罗斯联邦, Novosibirsk, 660090
N. Pashchin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
俄罗斯联邦, Novosibirsk, 660090
S. Suprun
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
俄罗斯联邦, Novosibirsk, 660090
E. Fedosenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
俄罗斯联邦, Novosibirsk, 660090
V. Sherstyakova
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
俄罗斯联邦, Novosibirsk, 660090
O. Tereshchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
俄罗斯联邦, Novosibirsk, 660090